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The new device works at 1.8 volts and offers data transfer rates of 533Mbps that can be extended to 667Mbps for networks and special system environments, Samsung said.
The 512Mbit DDR-II SDRAM meets standards set by JEDEC (Joint Electron Device Engineering Council) for DDR-II in March, Samsung said.
Volume production of the 60-ball BGA (ball grid array) device will begin in the autumn of 2003, the company said.